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| Schottky Barrier Diodes (SBD) MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification K A 0.625 I Features 0.5 0.1 2 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125 -55 to +125 Unit V V mA A C C 0.4 0.1 1.7 0.1 2.5 0.2 0.4 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (nonrepetitive) Marking Symbol: 2H Internal Connection 2 1 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 5 V VR = 10 V IF = 10 mA IF = 500 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 0.3 0.5 60 5 Conditions Min Typ Max 1 10 0.4 0.55 Unit A A V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.7 0.1 I Absolute Maximum Ratings Ta = 25C 0.16 - 0.06 + 0.1 1.25 0.1 * Mini package (S-mini type 2-pin) * Reverse current (DC value) VR is low 0.3 1 MA2ZD02 IF V F 103 0.8 0.7 Schottky Barrier Diodes (SBD) VF Ta 104 IR VR 102 Ta = 125C Forward current IF (mA) Forward voltage VF (V) 0.6 0.5 0.4 0.3 0.2 0.1 50 mA 5 mA 10 - 20C Reverse current IR (A) 75C 25C 103 Ta = 125C IF = 500 mA 102 75C 10 1 10-1 1 25C 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 104 80 70 Ct VR 1 000 Ta = 25C 300 IF(surge) tW Ta = 25C IF(surge) tW 100 30 10 3 1 0.3 0.1 0.1 Breakdown point (typ.) Reverse current IR (A) 102 VR = 20 V 10 V 6V 3V Terminal capacitance Ct (pF) 103 60 50 40 30 20 10 10 1 10-1 -40 0 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward surge current IF(surge) (A) 0.3 1 3 10 30 100 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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